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AVALANCHE BREAKDOWN VOLTAGE OF A MICROWAVE PIN DIODE.RATNAKUMAR KN.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 7; PP. 655-656; BIBL. 3 REF.Article

ELECTRONIC SWITCHING IN PYRANTHRONE THIN FILM.SAKAI Y; SADAOKA Y.1975; CHEM. LETTERS; JAP.; DA. 1975; NO 5; PP. 455-458; BIBL. 8 REF.Article

ETUDE DES DOMAINES LOCAUX DE CHARGE NEGATIVE DANS LE SYSTEME MOSSHIRSHOV YU M; FROLOV OS; GAL'KA IM et al.1974; MIKROELEKTRONIKA; S.S.S.R.; DA. 1974; VOL. 3; NO 4; PP. 332-336; BIBL. 8 REF.Article

SECOND BREAKDOWN OF TRANSITRORS DURING INDUCTIVE TURNOFFKRISHNA S; HOWER PL.1973; PROC. I.E.E.E.; U.S.A.; DA. 1973; VOL. 61; NO 3; PP. 393-395; BIBL. 2 REF.Serial Issue

PROPRIETES D'AVALANCHE DE TRANSISTORS PLANARS EPITAXIAUX DE FAIBLE PUISSANCEKOPYL GF; KARPLYUK AI; MUSHCHENKO VA et al.1973; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1973; NO 11; PP. 63-66; BIBL. 3 REF.Serial Issue

INVESTIGATION ON THE PULSE-HEIGHT DISTRIBUTION OF ELECTRON AVALANCHES GENERATED BY THERMIONICALLY EMITTED ELECTRONS IN A PROPORTIONAL COUNTERCHATTERJEE SD; SASTRI RC; DHARA M et al.1978; INDIAN J. PHYS., A; IND; DA. 1978; VOL. 52; NO 2; PP. 100-113; BIBL. 21 REF.Article

PREDICTION OF AVALANCHE BREAKDOWN VOLTAGE IN SILICON STEP JUNCTIONS.NUTTALL KI; NIELD MW.1974; INTERNATION. J. ELECTRON.; G.B.; DA. 1974; VOL. 37; NO 3; PP. 295-309; BIBL. 19 REF.Article

REFLEXIONS SUR LES STRUCTURES HYPERFREQUENCES A PROFILS CONTROLES.MARIN BH.1974; ELECTR. ELECTRON. MOD., INDUSTR.; FR.; DA. 1974; VOL. 44; NO 280; PP. 57-63Article

ETUDE DU PROCESSUS DE VARIATION DU TYPE DU CLAQUAGE D'AVALANCHE A CELUI DE MESOPLASMA DANS LES JONCTIONS P-N DE SILICIUMPENTYUSH EH V; DEKENA EH K; PURITIS T YA et al.1974; LATV. P.S.R. ZINAT. AKAD. VEST., FIZ. TEH. ZINAT. SER.; S.S.S.R.; DA. 1974; NO 5; PP. 48-57; ABS. ANGL.; BIBL. 15 REF.Article

DIE ENTSTEHUNG UND AUSKOPPLUNG ELEKTROMAGNETISCHER IMPULSE IN KERNSTRAHLUNGSDETEKTOREN MIT LAWINENBILDUNG = FORMATION ET DECLENCHEMENT D'IMPULSIONS ELECTROMAGNETIQUES DANS LES DETECTEURS DE RAYONNEMENTS AVEC FORMATION D'AVALANCHESMICHEL HS.1972; ISOTOPENPRAXIS; DTSCH.; DA. 1972; VOL. 8; NO 7; PP. 244-248; ABS. ANGL. RUSSE; BIBL. 8 REF.Serial Issue

MULTIPLICATION ELECTRONIQUE DANS UN GAZ SOUMIS A UN CHAMP ELECTRIQUE UNIFORMECHATELLARD P; MAUREL J; VIDAL G et al.1971; J. PHYS., COLLOQ.; FR.; DA. 1971; VOL. 32; NO 10; PP. 156-158; ABS. ANGL.; BIBL. 5 REF.; (COLLOQ. SOC. FR. PHYS.; EVIAN; 1971)Conference Paper

ON THE TIME DEPENDENCY OF THE AVALANCHE PROCESS IN SEMICONDUCTORS.WALMA AA; HACKAM R.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 6; PP. 511-517; BIBL. 10 REF.Article

EFFET D'UN MICROCLAQUAGE D'AVALANCHE DANS LA ZONE DE CHARGE D'ESPACE DE CONDENSATEURS MDSDENISYUK VA; ZAKHAROV VP; POPOV VM et al.1975; MIKROELEKTRONIKA; S.S.S.R.; DA. 1975; VOL. 4; NO 1; PP. 47-49; BIBL. 6 REF.Article

BIPOLAR TRANSISTOR MODELING OF AVALANCHE GENERATION FOR COMPUTER CIRCUIT SIMULATION.DUTTON RW.1975; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1975; VOL. 22; NO 6; PP. 334-338; BIBL. 11 REF.Article

AVALANCHE BREAKDOWN VOLTAGE OF DIFFUSED JUNCTIONS IN SILICONWILSON PR.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 9; PP. 991-998; BIBL. 9 REF.Serial Issue

TEMPERATURE DU GAZ DANS UNE DECHARGE COURONNE AVEC EFFET D'AVALANCHEDZHUVARLY CH M; GORIN YU V.1972; AKAD. NAUK AZERBAJDZH. S.S.R., DOKL.; S.S.S.R.; DA. 1972; VOL. 28; NO 11-12; PP. 20-22; ABS. AZERB. ANGL.; BIBL. 7 REF.Serial Issue

PARTICULARITES DE LA MULTIPLICATION PAR AVALANCHE DU COURANT DANS LES STRUCTURES TRANSISTORS AU GERMANIUMGAVRILOV LE.1980; RADIOTEKH. I ELEKTRON.; SUN; DA. 1980; VOL. 25; NO 1; PP. 177-187; BIBL. 18 REF.Article

MECHANISM OF ELECTRICAL BREAKDOWN IN SIO2 FILMS.RIDLEY BK.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 3; PP. 998-1007; BIBL. 49 REF.Article

COMMUTATION EN AVALANCHE DANS LES STRUCTURES IN-GAAS(CU)-INBRODOVOJ VA; DERIKOT NZ; PEKA GP et al.1975; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1975; VOL. 9; NO 3; PP. 456-461; BIBL. 20 REF.Article

PROCESSUS TRANSITOIRE A L'INJECTION EN AVALANCHE DANS LES STRUCTURES A TROIS COUCHESGORDEEV GV; KARDO SYSOEV AF; CHASHNIKOV IG et al.1975; RADIOTEKH. I ELEKTRON.; S.S.S.R.; DA. 1975; VOL. 20; NO 8; PP. 1704-1709; BIBL. 7 REF.Article

BULK BREAKDOWN IN MESA IMPATT STRUCTURES.DASCALU D; BREZEANU G; MARIN N et al.1974; REV. ROUMAINE PHYS.; ROUMAN.; DA. 1974; VOL. 19; NO 5; PP. 571-573; H.T. 2; ABS. FR.; BIBL. 5 REF.Article

I-V CHARACTERISTICS OF MOS CAPACITORS WITH POLYCRYSTALLINE SILICON FIELD PLATESNEUGEBAUER CA; BURGESS JF; JOYNSON RE et al.1972; J. APPL. PHYS.; U.S.A.; DA. 1972; VOL. 43; NO 12; PP. 5041-5044; BIBL. 5 REF.Serial Issue

DETERMINATION OF IMPATT DIODE MULTIPLICATION AND SATURATION CURRENT FROM 300 MHZ NOISE MEASUREMENTS.BERENZ J; TOMASSINI M; LEE CA et al.sdIN: ACT. SEMICOND. DEV. MICROWAVES INTEGRATED OPT. BIENN. CORNELL ELECTR. ENG. CONF. 5. PROC.; ITHACA, N.Y.; 1975; S.L.; DA. S.D.; PP. 407-418; BIBL. 10 REF.Conference Paper

CRITICAL DAMPING CONDITION IN IMPATT DIODESSAXENA P.1979; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1979; VOL. 55; NO 2; PP. K207-K210; BIBL. 6 REF.Article

MODELE MATHEMATIQUE D'UN TRANSISTOR BIPOLAIRE POUR DES REGIMES DE FONCTIONNEMENT ORDINAIRE ET EN AVALANCHEDYAKONOV VP; SAMOJLOVA TA.1979; RADIOTEKHNIKA; SUN; DA. 1979; VOL. 34; NO 10; PP. 13-18; BIBL. 10 REF.Article

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